Simulation of Semiconductor Lithography and Topography

A brief perspective is given initially on the goals, exposure methods, performance and challenges in the lithography process. The basic framework for simulating optical lithography is then presented using three important physical aspects: imaging, resist exposurebleaching and resist development etching. Image quality in both contact/proximity and projection printing are considered. The verification by comparison of simulated resist profiles with SEM cross sections from resist images on wafers in then considered. The chapter concludes with a discussion of the challenges facing projection printing and the technology directions emerging to meet them. This Chapter forms the cornerstone for many of the lithography concepts and models throughout this monograph.